Document
2N5635 (SILICON) 2N5636 2N5637
NPN SILICON RF POWER TRANSISTORS
· .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment.
• Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch.
• Low inductance strip line packaging for easier and better broad· band designs.
• Ceramic Package
• Choice of Power Levels at 400 MHz. 28 Vdc 2N5635 - 2.5 Watts - 6.2 dB (Min) Gain 2N5636 - 7.5 Watts - 5.7 dB (Min) Gain 2N5637 - 20 Watts - 4.6 dB (Min) Gain
*MAXIMUM RATINGS Rating
Collector-Emitter Voltage Coliector·Ba.. Voltage Emitter-Base Voltage Collector Current Total Device DissipationflllTC =250 C
Derate above 25°C Operating and Storage Junction
Temperatura Range
-Indicatel JEOEC Registered Oate.
Symbol
VCEO VCB VEB IC
Po
TJ.Tstg
2N5636i 2N5636i 2N1i637
35.