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2N5637 Dataheets PDF



Part Number 2N5637
Manufacturers ETC
Logo ETC
Description NPN SILICON RF POWER TRANSISTORS
Datasheet 2N5637 Datasheet2N5637 Datasheet (PDF)

2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Low inductance strip line packaging for easier and better broad· band designs. • Cer.

  2N5637   2N5637



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2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Low inductance strip line packaging for easier and better broad· band designs. • Ceramic Package • Choice of Power Levels at 400 MHz. 28 Vdc 2N5635 - 2.5 Watts - 6.2 dB (Min) Gain 2N5636 - 7.5 Watts - 5.7 dB (Min) Gain 2N5637 - 20 Watts - 4.6 dB (Min) Gain *MAXIMUM RATINGS Rating Collector-Emitter Voltage Coliector·Ba.. Voltage Emitter-Base Voltage Collector Current Total Device DissipationflllTC =250 C Derate above 25°C Operating and Storage Junction Temperatura Range -Indicatel JEOEC Registered Oate. Symbol VCEO VCB VEB IC Po TJ.Tstg 2N5636i 2N5636i 2N1i637 35.


2N5636 2N5637 2N5641


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