2N5556

2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 mAde 300 2.0 . mW mW/"C -65 to +175 ·c -65 to +200 ·C FIGURE 1 - EQUIVALENT LOW FREQUENCY CIRCUIT ~~r-OS~----C-gdC-dS-'----IY-~-IV-i~------~ Vis= jw Giss Vos = 1/ross + jw Coss YI, =[YIsI Yrs= -jw Crss Ciss = Cgd + Cgs Crs, =Cgd Coss = Cgd + Cds 2-184 STYLE 1 PIN 1. 2. 3. 4. DIM A F G H J K1 L M N P All JEDEC dimension...