2NS471 (SILICON)
thru
2NS476
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications.
High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types
High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc
Low Reverse Transfer Capacita...
