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2N5363 Dataheets PDF



Part Number 2N5363
Manufacturers ETC
Logo ETC
Description Silicon N-channel junction field-effect transistors
Datasheet 2N5363 Datasheet2N5363 Datasheet (PDF)

2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg T.

  2N5363   2N5363



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2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg TJ Value Unit 10 mAdc 40 Vdc 40 Vdc 300 2.0 -65 to +200 mW mW/oC °c -65 to +175 °c ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherWise noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 JiAde, Vns = 0) Gate-Source Cutoff Voltage (Vns = 15 Vde, ~ = 100 nAdc) Gate Reverse Current (VGS = 20 Vde, Vns =0) (VGS = 20 Vde, Vns =0, TA =150°C) 2N5358 2N5359 2N5360 2N5361 2N5362 2N5363 2N5364 Symbol Min Max Unit V(BR)GSS 40 - Vde VGS(off) IGSS 0.5 3.0 .


2N5362 2N5363 2N5364


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