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2N5347

Part Number	2N5347
Manufacturer	ETC
Description	MEDIUM-POWER NPN SILICON TRANSISTORS
Published	Jul 14, 2018
Detailed Description	53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .. designed for switching and wide-band amplifier a...
Datasheet	2N5347 PDF File

Overview

53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .
.
designed for switching and wide-band amplifier applications.
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.
2 Vdc (Max) @ IC = 7.
0 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base CUrrent Total Device Dissipation@ TC = 25'C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ• Tstg 2NS346 2NS347 80 2NS348 2NS349 100 ...

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