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2N5861

NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR

Description

2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER . designed for medium·current, high·speed switching applications. Ideally suited for ferrite core memory driver circuits. Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc Low Coliector·Base Capacit...

ETC

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