2N5846

2N5846 (SILICON) 2N5847 The RFLine NPN SILICON RF POWER TRANSISTORS 3.5 W. 7.0 W - 50 MHz RFPOWER TRANSISTORS NPN SILICON · .. designed primarily for use in large-signal amplifier driver and predriver stages, these devices are intended for use in industrial communications equipment operating at frequencies to 80 MHz. Optimized for Operation from a 12.5 Volt Supply Power Output@ 12.5 Vdc, 50 MHz Pout = 3.5 W - 2N5846 8.0 W - 2N5847 Large-Signal Impedance Data Permit Convenient Matching Network Design TO-102 CASE 24 2N5846 CASE 145A-Ol *MAXIMUM RATINGS Rating Coliector~E mitter Voltage Coliector·Base Voltage Emitter·Base Voltase Collector Current - Continuous Total Device Dissipation@Tc=250C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po TJ. Tstg I2N5846 2N5847 18 36 4.0 1.0 I I10 57.2 2.0 20 114 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC °c Indicates JEOEC Registered Data. CASE 145A-Ol 2N5847 d"~~I[T ...