Document
2N5845 (SILICON) 2N5845A
NPN SILICON ANNULAR TRANSISTORS
. designed for high·current saturated switching and core driver applications.
• Fast Switching Times@ IC = 500 mAde ton = 30 ns (Max) - 2N5845A 40 ns (Max) - 2N5845 toff = 50 ns (Max) - 2N5845A 60 ns (Max) - 2N5845
• High Current Gain - Bandwidth Product fT = 250 MHz (Min) - 2N5845A 200 MHz (Min) - 2N5845
• Low Collector-Emitter Saturation Voltage - @ IC = 500 mAde VCE(sat) = 0.5 Vdc (Max) - 2N5845A 0.6 Vdc (Max) - 2N5845
NPN SILICON SWITCHING TRANSISTORS
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA ::::I 25°C
Derate above 2SoC T9tal Power Dissipation @ TC ::: 26°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
VCEO VeB VEB IC
Po
Po
TJ,Tstg
Value
40 50 6.0 1.0 625 5.0 1.5 12 -55 to +150
Unit
Vdc Vdc Vdc Adc mW mW/oC Watt mW/oC
°c
THERMAL CHARACTERISTICS
Characteristic Thermal R.