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2N5845 Dataheets PDF



Part Number 2N5845
Manufacturers ETC
Logo ETC
Description NPN SILICON ANNULAR TRANSISTORS
Datasheet 2N5845 Datasheet2N5845 Datasheet (PDF)

2N5845 (SILICON) 2N5845A NPN SILICON ANNULAR TRANSISTORS . designed for high·current saturated switching and core driver applications. • Fast Switching Times@ IC = 500 mAde ton = 30 ns (Max) - 2N5845A 40 ns (Max) - 2N5845 toff = 50 ns (Max) - 2N5845A 60 ns (Max) - 2N5845 • High Current Gain - Bandwidth Product fT = 250 MHz (Min) - 2N5845A 200 MHz (Min) - 2N5845 • Low Collector-Emitter Saturation Voltage - @ IC = 500 mAde VCE(sat) = 0.5 Vdc (Max) - 2N5845A 0.6 Vdc (Max) - 2N5845 NPN SILICON SWI.

  2N5845   2N5845



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2N5845 (SILICON) 2N5845A NPN SILICON ANNULAR TRANSISTORS . designed for high·current saturated switching and core driver applications. • Fast Switching Times@ IC = 500 mAde ton = 30 ns (Max) - 2N5845A 40 ns (Max) - 2N5845 toff = 50 ns (Max) - 2N5845A 60 ns (Max) - 2N5845 • High Current Gain - Bandwidth Product fT = 250 MHz (Min) - 2N5845A 200 MHz (Min) - 2N5845 • Low Collector-Emitter Saturation Voltage - @ IC = 500 mAde VCE(sat) = 0.5 Vdc (Max) - 2N5845A 0.6 Vdc (Max) - 2N5845 NPN SILICON SWITCHING TRANSISTORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA ::::I 25°C Derate above 2SoC T9tal Power Dissipation @ TC ::: 26°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VeB VEB IC Po Po TJ,Tstg Value 40 50 6.0 1.0 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc Adc mW mW/oC Watt mW/oC °c THERMAL CHARACTERISTICS Characteristic Thermal R.


2N5842 2N5845 2N5845A


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