BC856UF

Semiconductor BC856UF PNP Silicon Transistor Descriptions General purpose application Switching application Features High voltage : VCEO=-55V Complementary pair with BC846UF Ordering Information Type NO. BC856UF Marking CV : hFE rank Package Code SOT-323F Outline Dimensions 2.1±0.1 0.30~0.40 1.30±0.1 unit : mm 1.30 BSC 2.0±0.1 1 3 0.70-0.15 2 0.11±0.05 +0.1 PIN Connections 1. Base 2. Emitter 3. Collector KST-3038-001 0~0.1 1 BC856UF Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -80 -55 -5 -100 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure (Ta=25°C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE fT Cob NF * Test Condition IC=-1mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IB=0 VCE=-5V, IB=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ Min. Typ. Max. -55 110 -900 150 -700 -650 -15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-3038-001 2 BC856UF Electrical Cha...