Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
BC856F; BC857F; BC858F series PNP general purpose transistors
Preliminary specification Supersedes data of 1998 Nov 10 1999 May 21
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification especially in portable equipment. DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. MARKING TYPE NUMBER BC856AF BC856BF BC857AF BC857BF MARKING CODE 3A 3B 3E 3F TYPE NUMBER BC857CF BC858AF BC858BF BC858CF MARKING CODE 3G 3J 3K 3L
BC856F; BC857F; BC858F series
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3 3 1 2
MAM411
1 Top view
2
Fig.1
Simplified outline (SC-89; SOT490) and symbol.
1999 May 21
2
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC856AF; BC856BF BC857AF; BC857BF; BC857CF BC858AF; BC858BF; BC858CF VCEO collector-emitter voltage BC856AF; BC856BF BC857AF; BC857BF; BC857CF BC858AF; BC858BF; BC858CF VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − − −65 − −65 −65 −45 −30 −5 −100 −200 −100 250 +150 150 +150 V mA mA mA mW °C °C °C CONDITIONS open emitter − − − −80 −50 −30 V V V MIN. MAX. UNIT
1999 May 21
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC856AF; BC857AF; BC858AF BC856BF; BC857BF; BC858BF BC857CF; BC858CF VCEsat VBE Cc fT F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure PARAMETER thermal resistance from junction to ambient
BC856F; BC857F; BC858F series
CONDITIONS in free air; note 1
VALUE 500
UNIT K/W
CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V − − −
MIN.
MAX. −15 −5 −100 250 475 800 −200 −400 −750 −820 2.5 − 10
UNIT nA µA nA
125 220 420 IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V IE = ie = 0; VCB = −10 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f =.