BC856BT

BC856T PNP Silicon AF Transistor Preliminary data
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 3 2 1 VPS05996 Type BC856AT BC856BT Maximum Ratings Parameter Marking 3As 3Bs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 65 80 80 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature mA mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
165 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-08-2002 Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, ...