2N5717

2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designed for audio amplifiers in low·power or battery operated applications. Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mAde - 2N 5718 I High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls\= 350 /lmhos (Typ) @ ID = 50 /lAde - 2N5716 550/lmhos (Typ) @ ID = 200/lAdc - 2N5717 900/lmhos (Typ) @ ID = 800 /lAde - 2N5718 Low Noise Voltage - en = 75 nVIj""HZ (Max) @ f = 1.0 kHz Drain and Source Interchangeable LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS en = 75 nV/.JHz 'MAXIMUM RATINGS Rating Drai n~Gate Vol tage Reverse Gate-Source Voltage Forward Gate Current, Total Power Dissipation @ TA = 25°C Derate above 2SoC Operating Channel Temperature Storage Temperature Range Symbol VOG VGSR IGF Po Tehannel Tstg Value 40 40...