Document
PNP Silicon AF Transistors
BC 856 ... BC 860
Features
q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type
BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C
Marking
3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs
Ordering Code (tape and reel)
Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889
Pin Configuration 123
BEC
Package1) SOT-23
1)For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 856 ... BC 860
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range
Thermal Resistance Junction - ambient1) Junction - soldering point
Symbol
VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg
Values BC 856 BC 857 BC 858
BC 860 BC 859 65 45 30 80 50 30 80 50 30 55 5
100 200 200 200 330
150 – 65 … + 150
Unit V
mA
mW ˚C
Rth JA Rth JS
≤ 310 ≤ 240
K/W
1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BC 856 ... BC 860
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-base breakdown voltage
IC = 10 µA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC 856
BC 857, BC 860
BC 858, BC 859
Emitter-base breakdown voltage IE = 1 µA
Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C
DC current gain IC = 10 µA, VCE = 5 V
BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C IC = 2 mA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C
Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1)Pulse test: t ≤ 300 µs, D = 2 %.
V(BR)CE0
V
65 –
–
45 –
–
30 –
–
V(BR)CB0
80 50 30
– – –
– – –
V(BR)CES
80 50 30
– – –
– – –
V(BR)EB0 5 – –
ICB0 – 1 15 nA – – 4 µA
hFE –
– 140 – – 250 – – 480 –
125 180 250 220 290 475 420 520 800
VCEsat
– –
mV 75 300 250 650
VBEsat
– –
700 – 850 –
VBE(on) 600 650 750 – – 820
Semiconductor Group
3
BC 856 ... BC 860
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
AC characteristics
Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance VCB = 10 V, f = 1 MHz
Input capacitance VCB = 0.5 V, f = 1 MHz
Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C
Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C
Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C
Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C
Noise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 30 Hz … 15 kHz
BC 859
BC 860
f = 1 kHz, ∆ f = 200 Hz
BC 859
BC 860
Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz
BC 860
Symbol
Values
Unit
min. typ. max.
fT Cobo Cibo h11e
h12e
h21e
h22e
F
Vn
–
–
–
– – –
– – –
– – –
– – –
– – – – –
250 –
MHz
3 – pF
8–
kΩ
2.7 – 4.5 – 8.7 –
10– 4
1.5 – 2.0 – 3.0 –
–
200 – 330 – 600 –
µS
18 – 30 – 60 –
dB
1.2 4 1.0 3 1.0 4 1.0 4
– 0.110 µV
Semiconductor Group
4
BC 856 ... BC 860
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC) VCE = 5 V
Semiconductor Group
5
BC 856 ... BC 860
Collector cutoff current ICB0 = f (TA) VCB = 30 V
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20
DC current gain hFE = f (IC) VCE = 5 V
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
Semiconductor Group
6
h parameter he = f (IC) normalized VCE = 5 V
BC 856 ... BC 860
h parameter he = f (VCE) normalized IC = 2 mA
Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
Noise figure F = f (f) IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V
Semiconductor Group
7
Noise figure F = f (IC) VCE = 5 V, f = 120 Hz
BC 856 ... BC 860
Noise figure F = f (IC) VCE = 5 V, f = 1 kHz
Noise figure F = f (IC).