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BC856B Dataheets PDF



Part Number BC856B
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors
Datasheet BC856B DatasheetBC856B Datasheet (PDF)

PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C18.

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PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889 Pin Configuration 123 BEC Package1) SOT-23 1)For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 856 ... BC 860 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Symbol VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg Values BC 856 BC 857 BC 858 BC 860 BC 859 65 45 30 80 50 30 80 50 30 55 5 100 200 200 200 330 150 – 65 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ 310 ≤ 240 K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 856 ... BC 860 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-base breakdown voltage IC = 10 µA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 856 BC 857, BC 860 BC 858, BC 859 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C DC current gain IC = 10 µA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C IC = 2 mA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1)Pulse test: t ≤ 300 µs, D = 2 %. V(BR)CE0 V 65 – – 45 – – 30 – – V(BR)CB0 80 50 30 – – – – – – V(BR)CES 80 50 30 – – – – – – V(BR)EB0 5 – – ICB0 – 1 15 nA – – 4 µA hFE – – 140 – – 250 – – 480 – 125 180 250 220 290 475 420 520 800 VCEsat – – mV 75 300 250 650 VBEsat – – 700 – 850 – VBE(on) 600 650 750 – – 820 Semiconductor Group 3 BC 856 ... BC 860 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VCB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 30 Hz … 15 kHz BC 859 BC 860 f = 1 kHz, ∆ f = 200 Hz BC 859 BC 860 Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BC 860 Symbol Values Unit min. typ. max. fT Cobo Cibo h11e h12e h21e h22e F Vn – – – – – – – – – – – – – – – – – – – – 250 – MHz 3 – pF 8– kΩ 2.7 – 4.5 – 8.7 – 10– 4 1.5 – 2.0 – 3.0 – – 200 – 330 – 600 – µS 18 – 30 – 60 – dB 1.2 4 1.0 3 1.0 4 1.0 4 – 0.110 µV Semiconductor Group 4 BC 856 ... BC 860 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 856 ... BC 860 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 h parameter he = f (IC) normalized VCE = 5 V BC 856 ... BC 860 h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V Semiconductor Group 7 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz BC 856 ... BC 860 Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC).


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