2N6367 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR · . . designed primarily for driver applications in 12.5 v...
2N6367 (SILICON)
The RF Line
NPN SILICON RF POWER
TRANSISTOR · . . designed primarily for driver applications in 12.5 volt single~ideband amplifiers from 2.0 to 30 MHz.
Optimized for Operation from a 12:5 Volt Supply Power Output@ 12.5 Vdc, 30 MHz -:-H.O W (PEP) Intermodulation Distortion at Ra.ted Powe, Output-
IMD .= -30 dB (Max)
9 W (PEP) - 30 MHz
RF POWER ,
TRANSISTOR
NPN SILICON
"MAXIMUM RATINGS
,.
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous' Total Device Dissipation @ T C - 2SoC
Derate above 2SoC Storage Temperature Range'
*Indicates JEDEC Registered Da~a.
Symbol VCEO VCBO VEBO
IC
Po
T stg
Value 18 36 4.0 2.0 20
0.114 -65 to +200
Unit Vdc Vdc Vdc Ado Watts W/oC
°c
,
TYPICAL DRIVER. APPLICATION 2-30 MHz WIDE BAND AMPLIFIER
0.160 W(PEPj
80 WIPEP)
MILLIMETERS INCHES DIM MIN MAX MIN MAX
A 1464 14.89 B 9.47 9.73
C 6.07 7.14 D 5.59 5.84 E 2.16 2.67 F 0.10 0.15 G 18.19 18.54 H 2159 22.10 J 3.12 3.23...
