2N6417

2N6416,2N6417 NPN (SILICON) 2N6418,2N6419 PNP COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS · .. designed for low power audio amplifier and low·current, high speed switching applications. High Coliector·Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - 2N6416, 2N6418 = 100 Vdc (Min) - 2N6417, 2N6419 High DC Current Gain @ IC = 200 mAdc hFE = 40·250 Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc High Current Gain - 8andwidth Product fT = 40 MHz (Min) @ IC = 100 mAdc) Pin Compatible With TO·220AB Package 3AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80,100 VOLTS 15 WATTS 'MAXIMUM RATINGS Rating Collector-EmItter Voltage Collector-Base Voltage EmItter-Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @TC = 25°C Derate above 2SoC Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Reg...