2N6412,2N6413 NPN (SILICON) 2N6414,2N6415 PNP
COMPLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS
· .. designed for...
2N6412,2N6413
NPN (SILICON) 2N6414,2N6415
PNP
COMPLEMENTARY PLASTIC SILICON ANNULAR POWER
TRANSISTORS
· .. designed for low power audio amplifier and low current, high· speed switching applications.
Low Co lIectdt·Emitter Sustaining Voltage ~
VCEO(sus) = 40 Vdc (Min) - 21116412, 21116414
. '= 60 Vdc (Min) - 21116413, 21116415
High Current·Gain - Bandwidth Product fT = 50 MHz (Min) @ IC = 100 mAdc
DC Current Gain Specified at 0.2, 1.0, 2.0 and 4.0 Adc
Collector· Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
Pin Compatible With TO·220AB Package
"MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
~ Peak
VeEO VeBO VEBO
Ie
Base Current Total Power Dissipation@Tc
Derate Above 25°C
250e
IB Po
Operating and Storage Ju.nction Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg
Characteristic
Thermal ResIstance, Junction to Case
·lndicatesJEDEC Registered Dat...