BC848BW

Transistors BC848BW / BC848B NPN General Purpose Transistor BC848BW / BC848B zFeatures 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Collector power BC848BW dissipation BC848B PC Junction temperature Tj Storage temperature Tstg ∗ When mounted on a 7×5×0.6mm ceramic board. Limits 30 30 5 0.1 0.2 0.2 0.35 150 −65~+150 Unit V V V A W W W∗ °C °C zExternal dimensions (Unit : mm) BC848BW SOT-323 ROHM : UMT3 EIAJ : SC-70 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.9±0.1 0.2 0.7±0.1 1.25±0.1 2.1±0.1 0.1~0.4 (3) 0.3 +0.1 −0 0.15±0.05 All terminals have same dimensions 0~0.1 (1) Emitter (2) Base (3) Collector BC848B, BC848C SOT-23 2.9±0.2 1.9±0.2 0.95 0.95 0.95 +0.2 −0.1 0.45±0.1 (1) (2) (3) 1.3 +0.2 −0.1 2.4±0.2 0~0.1 0.2Min. ROHM : SST3 0.4 +0.1 −0.05 0.15−+00..016 All terminals have same dimensions (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE fT Cob Cib Min. 30 30 5 − − − − 0.58 200...