Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846ALT1/D
General Purpose Transistors
BC846ALT1,BLT1 BC847ALT1,
COLLECTOR 3
NPN Silicon
1 BASE
BLT1,CLT1 thru BC850ALT1,BLT1, CLT1
BC846, BC847 and BC848 are Motorola Preferred Devices
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100
2 EMITTER
Unit V V V mAdc
1 2
3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C BC846A,B BC847A,B,C BC848A,B,C, BC849A,B,C, BC850A,B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
nA µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A, BC849A, BC850A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV —
(IC = 2.0 mA, VCE = 5.0 V)
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emit.