Document
BC 846S
NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package
4 5 6
2 1
3
VPS05604
Type BC 846S
Marking Ordering Code 1Ds Q62702-C2529
Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1
Package SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Symbol Value 65 80 80 6 100 200 250 150 - 65...+150 mW °C mA Unit V
VCEO VCBO VCES VEBO IC I CM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤275 ≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Ma 1998-11-01 -12-1998
BC 846S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage typ. max. 15 5
Unit
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO I CBO hFE
65 80 80 6 -
V
I C = 10 mA, I B = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
Collector-emitter breakdown voltage
I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0
Collector cutoff current
nA µA -
VCB = 30 V, I E = 0 , TA = 150 °C
DC current gain 1)
I C = 10 µA, VCE = 5 V I C = 2 mA, V CE = 5 V
Collector-emitter saturation voltage1)
200
250 290 90 200 700 900 660 -
450 mV 250 650 700 770
VCEsat
-
I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
VBEsat
-
I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA
Base-emitter voltage 1)
VBE(ON)
580 -
I C = 2 mA, V CE = 5 V I C = 10 mA, VCE = 5 V
1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22
Ma 1998-11-01 -12-1998
BC 846S
Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. AC Characteristics per Transistor Transition frequency typ. 250 2 10 4.5 2 330 30 max. -
Unit
fT Ccb Ceb h11e h12e h21e h22e
-
MHz pF
I C = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance kΩ 10 -4 µS
I C = 2 mA, V CE = 5 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
I C = 2 mA, V CE = 5 V, f = 1 kHz
Short-circuit forward current transfer ratio
I C = 2 mA, V CE = 5 V, f = 1 kHz
Open-circuit output admittance
I C = 2 mA, V CE = 5 V, f = 1 kHz
Semiconductor Group Semiconductor Group
33
Ma 1998-11-01 -12-1998
BC 846S
Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy
300
mW
TS Ptot
200
TA
150
100
50
0 0
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f (tp)
Permissible P.