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BC846S Dataheets PDF



Part Number BC846S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon AF Transistor
Datasheet BC846S DatasheetBC846S Datasheet (PDF)

BC 846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package 4 5 6 2 1 3 VPS05604 Type BC 846S Marking Ordering Code 1Ds Q62702-C2529 Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 Package SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC.

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BC 846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package 4 5 6 2 1 3 VPS05604 Type BC 846S Marking Ordering Code 1Ds Q62702-C2529 Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 Package SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Symbol Value 65 80 80 6 100 200 250 150 - 65...+150 mW °C mA Unit V VCEO VCBO VCES VEBO IC I CM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -12-1998 BC 846S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage typ. max. 15 5 Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO I CBO hFE 65 80 80 6 - V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Collector-emitter breakdown voltage I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current nA µA - VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) I C = 10 µA, VCE = 5 V I C = 2 mA, V CE = 5 V Collector-emitter saturation voltage1) 200 250 290 90 200 700 900 660 - 450 mV 250 650 700 770 VCEsat - I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) VBEsat - I C = 10 mA, I B = 0.5 mA I C = 100 mA, IB = 5 mA Base-emitter voltage 1) VBE(ON) 580 - I C = 2 mA, V CE = 5 V I C = 10 mA, VCE = 5 V 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Ma 1998-11-01 -12-1998 BC 846S Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. AC Characteristics per Transistor Transition frequency typ. 250 2 10 4.5 2 330 30 max. - Unit fT Ccb Ceb h11e h12e h21e h22e - MHz pF I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance kΩ 10 -4 µS I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Semiconductor Group Semiconductor Group 33 Ma 1998-11-01 -12-1998 BC 846S Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 300 mW TS Ptot 200 TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible P.


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