SILICON PLANAR EPITAXIAL PNP TRANSISTOR
BDS18SMD
• High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suit...
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS18SMD
High Voltage Hermetic Ceramic Surface Mount Package Ideally suited for Power Linear, Switching
and general Purpose Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-120V
VCEO
Collector – Emitter Voltage
-120V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-8A
IB Base Current
-2A
PD Total Power Dissipation at TC ≤ 75°C
80W
Derate Above 75°C
0.64W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 1.56
Units °C/W
** This datasheet supersedes document 3346
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the t...
