Document
Semiconductor
BC818F
NPN Silicon Transistor
Descriptions
• High current application • Switching application
Features
• Suitable for AF-Driver stage and low power output stages • Complementary pair with BC808F
Ordering Information
Type NO. BC818F Marking PA : hFE rank Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1
unit : mm
1
2.9±0.1 1.90 BSC
3
0.4±0.05
2
0.15±0.05
KST-2088-000
0.9±0.1
0~0.1
PIN Connections 1. Base 2. Emitter 3. Collector
1
BC818F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
30 25 5 800 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob
Test Condition
IC=1mA, IB=0 VCE=1V, IC=300mA IC=500mA, IB=50mA VCB=30V, IE=0 VCE=1V, IC=100mA VCB=5V, IC=10mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
25 100 100 16 1.2 700 100 630 -
Unit
V V mV nA MHz pF
* : hFE rank /
16(A) : 100 ~ 250,
25(B) : 160 ~ 400,
40(C) : 250 ~ 630
KST-2088-000
2
BC818F
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 IC - VBE
Fig. 3 IC - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE -
IC
KST-2088-000
3
.