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BC818

Fairchild Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

BC817 / BC818 — NPN Epitaxial Silicon Transistor November 2014 BC817 / BC818 NPN Epitaxial Silicon Transistor Feature...


Fairchild Semiconductor

BC818

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Description
BC817 / BC818 — NPN Epitaxial Silicon Transistor November 2014 BC817 / BC818 NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low Power Output Stages Complement to BC807 / BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number BC81716MTF BC81725MTF BC81740MTF BC81816MTF BC81825MTF BC81840MTF Marking 8FA 8FB 8FC 8GA 8GB 8GC Package SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Note: 1. Affix “-16,-25,-40” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape and reel type packing. Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCBO Collector-Base Voltage Parameter VCEO VEBO IC TJ TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Junction Temperature Storage Temperature BC817 BC818 BC817 BC818 Value 50 30 45 25 5 800 150 -65 to +150 Unit V V V mA °C °C © 2002 Fairchild Se...




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