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BC817UPN

Infineon Technologies AG

NPN Silicon AF Transistor

NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-emitter satu...


Infineon Technologies AG

BC817UPN

File Download Download BC817UPN Datasheet


Description
NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistors in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BC817UPN 4 53 62 1 Tape loading orientation C1 B2 E2 654 Top View 654 W1s 123 Direction of Unreeling Marking on SC74 package (for example W1s) corresponds to pin 1 of device Position in tape: pin 1 opposite of feed hole side SC74_Tape TR2 TR1 123 E1 B1 C2 EHA07177 Type BC817UPN Marking Pin Configuration Package 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 115 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 45 50 5 500 1000 100 200 330 150 -6...




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