BC817

Semiconductor BC817 NPN Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary pair with BC807 Ordering Information Type NO. BC817 Marking NA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. 0~0.1 KST-2003-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 1 BC817 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 35 5 800 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=1mA, IE=0 VCE=1V, IC=300mA IC=500mA, IB=50mA VCB=25V, IE=0 VCE=1V, IC=100mA VCB=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 35 100 100 16 1.2 700 100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630 KST-2003-000 2 BC817 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE 2SC5344SF Fig. 3 IC - VCE ...