PNP Silicon AF Transistors
BC 807 BC 808
q q q q q
For general AF applications High collector current High current ga...
PNP Silicon AF
Transistors
BC 807 BC 808
q q q q q
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (
NPN)
Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40
Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs
Ordering Code Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 807 BC 808
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BC 807 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 50 5
Values BC 808 25 30 5 500 1 100 200 330 150 – 65 … + 150
Unit V
mA A mA mW ˚C
Total power dissipation, TC = 79 ˚C Ptot
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BC 807 BC 808
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 807 BC 808 Collector-base breakdown voltage IC = 100 µA BC 807 BC 808 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter c...