BC807F

Semiconductor BC807F PNP Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary Pair with BC817F Ordering Information Type NO. BC807F Marking LA : hFE rank Package Code0 SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 KST-2085-000 0.9±0.1 0~0.1 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC807F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -35 -5 -800 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=-1mA, IB=0 VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCB=-25V, IE=0 VCE=-1V, IC=-100mA VCB=-5V, IE=10mA f=100MHz VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -35 100 100 16 -1.2 -700 -100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 KST-2085-000 2 BC807F Electrical Characteristic Curves Fig. 1 Pc-Ta Fig. 2 IC -VBE Fig. 3 IC - VCE Fig. 4 hFE - IC Fig. 5 VCE...