AA4040P3C-P22 Phototransistor
DESCRIPTION
z Made with NPN silicon phototransistor chips
FEATURES
z Mechanically and spec...
AA4040P3C-P22 Photo
transistor
DESCRIPTION
z Made with
NPN silicon photo
transistor chips
FEATURES
z Mechanically and spectrally matched to infrared emitting LED lamp
z Package: 500 pcs / reel z Moisture sensitivity level: 4 z RoHS compliant
APPLICATIONS
z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology
PACKAGE DIMENSIONS
RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1)
ABSOLUTE MAXIMUM RATINGS at TA=25°C
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to
change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications.
Parameter
Max.Ratings
Units
Collector-to-Emitter Voltage
30
Emitter-to-Collector Voltage
5
Power Dissipation at(or below) 25°C Free Air Temperature
100
Operating Tem...