1N5401G-K

1N5400G-K – 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Standard Rectifier FEATURES ● Glass passivated chip junction ● High current capability, Low VF ● High reliability ● High surge current capability ● Low power loss, high efficiency ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 3 A 50 - 1000 V IFSM TJ MAX Package 125 A 150 °C DO-201AD Configuration Single die MECHANICAL DATA ● Case: DO-201AD ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 1.20g (approximately) DO-201AD ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) 1N 1N 1N 1N 1N PARAMETER SYMBOL 5400 5401 5402 5404 5406 Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value VRRM VR(RMS) G-K 1N 5400G 50 G-K 1N 5401G 100 G-K 1N 5402G 200 G-K 1N 5404G 400 G-K 1N 5406G 600 35 70 140 280 420 Forward current IF 3 Surge peak forward current, 8.3ms single half sine wave superimposed IFSM 125 on rated load Junction temperature TJ -55 to +150 Storage temperature TSTG -55 to +150 1N 5407 G-K 1N 5407G 800 560 1N 5408 UNIT G-K 1N 5408G 1000 V 700 V A A °C °C 1 Version: C2105 1N5400G-K – 1N5408G-K Taiwan Semiconductor THERMAL PE...