BC638

PNP Silicon AF Transistors High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 635, BC 637, BC 639 (NPN) q BC 636 … BC 640 2 1 3 Type BC 636 BC 638 BC 640 Marking – Ordering Code Q68000-A3365 Q68000-A3366 Q68000-A3367 Pin Configuration 1 2 3 E C B Package1) TO-92 If desired, selected transistors, type BC 6 5 5 –10 (hFE = 63 … 160), or BC 6 5 5 –16 (hFE = 100 … 250) are available. Ordering codes upon request. 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 636 … BC 640 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg Values BC 636 45 45 Unit BC 638 60 60 5 1 1.5 100 200 0.8 (1) 150 – 65 … + 150 W ˚C mA A BC 640 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 55 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 636 … BC 640 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector...