BC638

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 Symbol VCER Rating -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -100 1 150 -65 ~ 150 Unit V V V V V V V V V V A A mA W °C °C VCES Collector Emitter Voltage VCEO Emitter Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ T STG 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BC635 : BC637/BC639 Collector Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC= -10mA, IB=0 -45 -60 -80 ICBO IEBO hFE VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -500mA, IB= -50mA VCE= -2V, IC= -500mA VCE= -5V, IC= -10mA, f=50MHz -0.1 -0.1 25 40 40 25 250 160 -0.5 -1 100 V V MHz Min Typ Max Unit V V V µA µA VCE (sat) VBE (on) fT Rev. B © 1999 Fairchild Semiconductor Corporation BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconduc...