BC557C

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector BC556; BC557 DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC556 BC557 VCEO collector-emitter voltage BC556 BC557 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT 1999 Apr 15 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER colle...