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BC517 Dataheets PDF



Part Number BC517
Manufacturers Motorola Inc
Logo Motorola  Inc
Description Darlington Transistors
Datasheet BC517 DatasheetBC517 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon Order this document by BC517/D BC517 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VCES VCB VEB IC PD 30 Vdc 40 Vdc 10 Vdc 1.0 Adc 625 mW 12 mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts 12 mW/°C Oper.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon Order this document by BC517/D BC517 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VCES VCB VEB IC PD 30 Vdc 40 Vdc 10 Vdc 1.0 Adc 625 mW 12 mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 nAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO ICES ICBO IEBO 1 23 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Min Typ Max Unit 30 — — Vdc 40 — — Vdc 10 — — Vdc — — 500 nAdc — — 100 nAdc — — 100 nAdc ©MMotootorroollaa, Small–Signal Inc. 1996 Transistors, FETs and Diodes Device Data 1 BC517 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) v1. Pulse Test: Pulse Width 2.0%. 2. fT = |hfe| • ftest hFE VCE(sat) VBE(on) fT Min 30,000 — — — Typ — — — 200 Max Unit —— 1.0 Vdc 1.4 Vdc — MHz RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data en, NOISE VOLTAGE (nV) NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) BC517 500 BANDWIDTH = 1.0 Hz RS ≈ 0 200 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 2. Noise Voltage in, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 100 µA 10 µA 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 3. Noise Current 200 100 BANDWIDTH = 10 Hz TO 15.7 kHz 70 IC = 10 µA 50 30 100 µA 20 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 RS, SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage 100 0 NF, NOISE FIGURE (dB) 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 10 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 100 0 Figure 5. Wideband Noise Figure VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 |hfe|, SMALL–SIGNAL CURRENT GAIN C, CAPACITANCE (pF) BC517 20 10 7.0 5.0 3.0 SMALL–SIGNAL CHARACTERISTICS TJ = 25°C 4.0 VCE = 5.0 V f = 100 MHz 2.0 TJ = 25°C Cibo Cobo 1.0 0.8 0.6 0.4 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 200 k 100 k 70 k 50 k TJ = 125°C 25°C 30 k 20 k 10 k 7.0 k 5.0 k – 55°C 3.0 k VCE = 5.0 V 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 8. DC Current Gain 500 3.0 2.5 IC = 10 mA 50 mA 2.0 TJ = 25°C 250 mA 500 mA 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (µA) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) 1.6 TJ = 25°C 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) – 1.0 *APPLIES FOR IC/IB ≤ hFE/3.0 – 2.0 *RqVC FOR VCE(sat) – 3.0 – 4.0 qVB FOR VBE – 5.0 25°C TO 125°C – 55°C TO 25°C 25°C TO 125°C – 55°C TO 25°C – 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients 500 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.05 0.5 BC517 SINGLE PULSE SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) Figure 12. Thermal Response 500 1.0 k 2.0 k 5.0 k 10 k 1.0 k 700 500 300 TA = 25°C 200 1.0 ms TC = 25°C 100 µs 1.0 s FIGURE A tP PP PP 100 70 50 30 20.


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