Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
Order this document by BC517/D
BC517
COLLECTOR 1
BASE 2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C Derate above 25°C
VCES VCB VEB
IC PD
30 Vdc 40 Vdc 10 Vdc 1.0 Adc 625 mW 12 mW/°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watts 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0)
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = 100 nAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 10 Vdc, IC = 0)
V(BR)CES V(BR)CBO V(BR)EBO
ICES ICBO IEBO
1 23
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Min Typ Max Unit 30 — — Vdc 40 — — Vdc 10 — — Vdc — — 500 nAdc — — 100 nAdc — — 100 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS(1)
DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc)
Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc)
Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
v1. Pulse Test: Pulse Width 2.0%.
2. fT = |hfe| • ftest
hFE VCE(sat) VBE(on)
fT
Min 30,000
— —
—
Typ — — —
200
Max Unit —— 1.0 Vdc 1.4 Vdc
— MHz
RS in
en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
en, NOISE VOLTAGE (nV)
NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C)
BC517
500 BANDWIDTH = 1.0 Hz
RS ≈ 0 200
100 10 µA
50
100 µA 20
IC = 1.0 mA 10
5.0 10 20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
Figure 2. Noise Voltage
in, NOISE CURRENT (pA)
2.0 BANDWIDTH = 1.0 Hz
1.0 0.7 0.5
IC = 1.0 mA 0.3
0.2
0.1 0.07 0.05
0.03
0.02 10 20
100 µA 10 µA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
Figure 3. Noise Current
200
100 BANDWIDTH = 10 Hz TO 15.7 kHz 70 IC = 10 µA 50
30 100 µA
20 1.0 mA
10 1.0
2.0 5.0 10 20 50 100 200 500 RS, SOURCE RESISTANCE (kΩ)
Figure 4. Total Wideband Noise Voltage
100 0
NF, NOISE FIGURE (dB)
14
BANDWIDTH = 10 Hz TO 15.7 kHz 12
10 10 µA
8.0
100 µA 6.0
4.0 IC = 1.0 mA 2.0
0 1.0 2.0
5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)
500 100 0
Figure 5. Wideband Noise Figure
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
|hfe|, SMALL–SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
BC517
20 10 7.0 5.0 3.0
SMALL–SIGNAL CHARACTERISTICS
TJ = 25°C
4.0 VCE = 5.0 V f = 100 MHz
2.0 TJ = 25°C
Cibo Cobo
1.0 0.8 0.6
0.4
2.0 0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
0.2 0.5
1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
200 k
100 k 70 k 50 k
TJ = 125°C 25°C
30 k 20 k
10 k
7.0 k 5.0 k
– 55°C
3.0 k
VCE = 5.0 V
2.0 k 5.0 7.0 10
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
500
3.0
2.5 IC = 10 mA 50 mA
2.0
TJ = 25°C 250 mA 500 mA
1.5
1.0
0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (µA)
Figure 9. Collector Saturation Region
V, VOLTAGE (VOLTS)
1.6 TJ = 25°C
1.4
VBE(sat) @ IC/IB = 1000 1.2
VBE(on) @ VCE = 5.0 V 1.0
0.8 VCE(sat) @ IC/IB = 1000
0.6 5.0 7.0
10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
– 1.0 *APPLIES FOR IC/IB ≤ hFE/3.0
– 2.0 *RqVC FOR VCE(sat)
– 3.0
– 4.0 qVB FOR VBE
– 5.0
25°C TO 125°C – 55°C TO 25°C
25°C TO 125°C
– 55°C TO 25°C
– 6.0 5.0 7.0 10
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
500
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 D = 0.5
0.2 0.3
0.2
0.1 0.1 0.07 0.05
0.03
0.02
0.01 0.1
0.2
0.05 0.5
BC517
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50 100 200 t, TIME (ms)
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
1.0 k 700 500
300 TA = 25°C 200
1.0 ms
TC = 25°C 100 µs 1.0 s
FIGURE A
tP PP
PP
100 70 50
30 20.