PNP Silicon Darlington Transistor
q High current gain q High collector current q Complementary type: BC 517 (NPN)
BC 51...
PNP Silicon Darlington
Transistor
q High current gain q High collector current q Complementary type: BC 517 (
NPN)
BC 516
2 3 1
Type BC 516
Marking –
Ordering Code Q62702-C944
Pin Configuration 123
CBE
Package1) TO-92
Maximum Ratings
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range
Thermal Resistance
Junction - ambient Junction - case2)
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values
Unit
30 V
40
10
500 mA
800
100
200
625 mW
150 ˚C
– 65 … + 150
Rth JA Rth JC
≤ 200 ≤ 135
K/W
1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 516
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter voltage1) IC = 10 mA; VCE = 5 V
AC characteristics
Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
–
V(BR)CB0 40
...
