BC450A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC450/D High Voltage Transistors PNP Silicon COLLECTOR 1 BC450,A 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD –100 –100 –5.0 –300 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mA, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –80 Vdc, IE = 0) ON CHARACTERISTICS* V(BR)CEO V(BR)CBO V(BR)EBO ICBO DC Current Gain (IC = –2.0 mA, VCE = –5.0 V) BC450 BC450A (IC = –10 mA, VCE = –5.0 V) BC450 BC450A (IC = –100 mA, VCE = –5.0 V) BC450 BC450A v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. hFE Min –100 –100 –5.0 — 50 120 50 100 50 60 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit — — Vdc — — Vdc — — Vdc — –100 nA...