MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC450/D
High Voltage Transistors
PNP Silicon
COLLECTOR 1
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC450/D
High Voltage
Transistors
PNP Silicon
COLLECTOR 1
BC450,A
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
–100 –100 –5.0 –300 625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –100 mA, IE = 0)
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
Collector Cutoff Current (VCB = –80 Vdc, IE = 0)
ON CHARACTERISTICS*
V(BR)CEO V(BR)CBO V(BR)EBO
ICBO
DC Current Gain
(IC = –2.0 mA, VCE = –5.0 V)
BC450 BC450A
(IC = –10 mA, VCE = –5.0 V)
BC450 BC450A
(IC = –100 mA, VCE = –5.0 V)
BC450 BC450A
v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
hFE
Min
–100
–100
–5.0
—
50 120 50 100 50 60
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
—
–100
nA...