BZV55C39

Zener Diode Features   Silicon epitaxial planar diode   High speed switching diode   500mW power dissipation   Reverse Voltage: 2.4 to 75 Volts Application   Voltage stabilization Absolute Maximum Ratings Tj = 25°C Characteristics Power Dissipation Z-current Junction Temperature Storage Temperature Range Test Conditions I = 4mm TL ≤ 25°C Max. Thermal Resistance Tj = 25°C Characteristics Test Conditions Junction Ambient I = 4mm TL = Constant Electrical Characteristics Tj = 25°C Characteristics Forward Voltage Test Conditions If = 200mA Symbol Pv Iz Tj Tstg Symbol RthJA Symbol Vf Values 500 Pv/Vz 175 -55 to +200 Unit Mw Ma °C °C Values 350 Unit K/W Min. Typ. Max. Unit - - 1.5 V Part Number BZV55C30 BZV55C39 BZV55C62 BZV55C75 BZV55C2V4 BZV55C2V7 Nominal Zener Voltage Vz @ Izt Min. 28 37 58 70 2.28 2.5 Max. 32 41 66 80 2.56 2.9 Test Current Izt mA 5 2.5 2.5 2.5 5 5 Max. Zener Impedance (Ω) Zzt @ Izt Zzt @ Izt ΩΩ 80 220 90 5...