BC337 / BC338
BC337 / BC338
NPN
General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für ...
BC337 / BC338
BC337 / BC338
NPN
General Purpose Si-Epitaxial Planar
Transistors Si-Epitaxial Planar-
Transistoren für universellen Einsatz
Version 2006-05-30
Power dissipation Verlustleistung
CBE
Plastic case Kunststoffgehäuse
16 9 18
Weight approx. – Gewicht ca.
2 x 2.54 Dimensions - Maße [mm]
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW TO-92 (10D3) 0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
E-B short B open C open
VCES VCEO VEBO Ptot IC ICM IB Tj TS
Grenzwerte (TA = 25°C)
BC337
BC338
50 V
30 V
45 V
25 V
5V
625 mW 1)
800 mA
1A
100 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16 Group -25 Group -40
hFE hFE hFE
VCE = 1 V, IC = 300 mA
Group -16 Group -25 Group -40
hFE hFE hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
100 160 250 160 250 400 2...