BC338

BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE Plastic case Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions - Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E-B short B open C open VCES VCEO VEBO Ptot IC ICM IB Tj TS Grenzwerte (TA = 25°C) BC337 BC338 50 V 30 V 45 V 25 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE VCE = 1 V, IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA VCEsat Kennwerte (Tj = 25°C) Min. Typ. Max. 100 160 250 160 250 400 2...