MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC327/D
Amplifier Transistors
PNP Silicon
COLLECTOR 1
B...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC327/D
Amplifier
Transistors
PNP Silicon
COLLECTOR 1
BC327,-16,-25 BC328,-16,-25
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC327 BC328 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
–45 –25 –50 –30
–5.0 –800 625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA, IB = 0)
BC327 BC328
V(BR)CEO
Collector – Emitter Breakdown Voltage (IC = –100 µA, IE = 0)
BC327 BC328
V(BR)CES
Emitter – Base Breakdown Voltage (IE = –10 mA, IC = 0)
Collector Cutoff Current (VCB = –30 V, IE = 0) (VCB = –20 V, IE = 0)
Collector Cutoff Current (VCE = –45 V, VBE = 0) (VCE = –25 V, VBE = 0)
Emitter Cutoff Current (VEB = –4.0 V, IC = 0)
BC327 BC328
BC327 BC328
V(BR)EBO ICBO ICES IEBO
Min
–45 –25
–50 –30 –5.0
— —
— — —
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Typ Max Unit
Vdc —— ——
Vdc —— ——
— — Vdc
nAdc — –100 — –...