BD439

BD439/441 BD439/441 Medium Power Linear and Switching Applications Complement to BD440, BD442 respectively 1 TO-126 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD439 : BD441 VCES Collector-Emitter Voltage : BD439 : BD441 Collector-Emitter Voltage : BD439 : BD441 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1. Emitter Value 60 80 60 80 60 80 5 4 7 1 36 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C VCEO VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD439 : BD441 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 Test Condition IC = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE = 5V, IC = 10mA VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 3 0.58 1.5 20 15 40 40 25 15 130 130 140 140 Min. 60 80 100 100 100 100 1 Typ. Max. Units V V µA µA µA µA mA ICBO ICES IEBO hFE VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product 0.8 V V...