BD435

BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD433 : BD435 : BD437 VCES Collector-Emitter Voltage : BD433 : BD435 : BD437 Collector-Emitter Voltage : BD433 : BD435 : BD437 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 22 32 45 22 32 45 22 32 45 5 4 7 1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W °C °C Value Units VCEO VEBO IC ICP IB PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD433/435/437 Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD433 : BD435 : BD437 Collector Cut-off Current : BD433 : BD435 : BD437 ICEO Collector Cut-off Current : BD433 : BD435 : BD437 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 VCE(sat) * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 130 130 140 VCE = 22V, VBE = 0 VCE = 32V, VBE = 0 VCE = 45V, VBE = 0 VEB = 5V, IC = 0 100 100 100 1 µA µA µA mA VCB ...