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BD250B Dataheets PDF



Part Number BD250B
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description PNP SILICON POWER TRANSISTORS
Datasheet BD250B DatasheetBD250B Datasheet (PDF)

BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD249 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA C 2 absolute maximum ratings at 25°C case temperature (unless.

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BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD249 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA C 2 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD250 Collector-emitter voltage (RBE = 100 Ω) BD250A BD250B BD250C BD250 Collector-emitter voltage (IC = -30 mA) BD250A BD250B BD250C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -25 -40 -5 125 3 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD250 V (BR)CEO IC = -30 mA (see Note 5) VCE = -55 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio V CE = -70 V V CE = -90 V V CE = -115 V ICEO IEBO VCE = -30 V V CE = -60 V VEB = VCE = V CE = V CE = IB = IB = VCE = V CE = -5 V -4 V -4 V -4 V -1.5 A -5 A -4 V -4 V VBE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IC = 0 IC = -1.5 A IC = -15 A IC = -25 A IC = -15 A IC = -25 A IC = -15 A IC = -25 A IC = IC = -1 A -1 A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 3 (see Notes 5 and 6) 25 10 5 -1.8 -4 -2 -4 V V IB = 0 BD250A BD250B BD250C BD250 BD250A BD250B BD250C BD250/250A BD250B/250C MIN -45 -60 -80 -100 -0.7 -0.7 -0.7 -0.7 -1 -1 -1 mA mA mA V TYP MAX UNIT hFE VCE(sat) VBE hfe VCE = -10 V VCE = -10 V |hfe| NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1 42 UNIT °C/W °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = -5 A V BE(off) = 5 V IB(on) = -0.5 A RL = 5 Ω † MIN IB(off) = 0.5 A tp = 20 µs, dc ≤ 2% TYP 0.2 0.4 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% TCS636AD COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 TCS636AB hFE - DC Current Gain 100 -1·0 10 -0·1 IC = -25 A IC = -20 A IC = -15 A IC = -10 A -0·1 -1·0 -10 -100 1 -0·1 -1·0 -10 -100 -0·01 -0·001 IC = -300 mA IC = -1 A IC = -3 A -0·01 IC - Collector Current - A IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·8 VCE = -4 V TC = 25°C TCS636AC VBE - Base-Emitter Voltage - V -1·6 -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 -100 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS636AB IC - Collector Current - A -10 tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -1·0 -0·1 BD250 BD250A BD250.


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