1N4123

1N4099 THRU 1N4135 SILICON ZENER DIODE LOW NOISE 6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table. DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 250 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) TYPE ZENER VOLTAGE VZ @ IZT MIN NOM MAX TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE ZZT @ IZT MAXIMUM REVERSE CURRENT IR @ VR MAXIMUM ZENER CURRENT IZM MAXIMUM NOISE DENSITY ND @ 250μA V V V μA Ω μA V mA μV/ Hz 1N4099 6.460 6.8 7.140 250 200 10 5.2 35.0 40 1N4100 7.125 7.5 7.875 250 200 10 5.7 31.8 40 1N4101 7.790 8.2 8.610 250 200 1.0 6.3 29.0 40 1N4102 8.265 8.7 9.135 250 200 1.0 6.7 27.4 40 1N4103 8.645 9.1 9.555 250 200 1.0 7.0 26.2 40 1N4104 9.50 10 10.50 250 200 1.0 7.6 24.8 40 1N4105 10.45 11 11.55 250 200 0.05 8.5 21.6 40 1N4106 11.40 12 12.60 250 200 0.05 9.2 20.4 40 1N4107 12.35 13 13.65 250 200 0.05 9.9 19.0 40 1N4108 13.30 14 14.70 250 200 0.05 10.7 17.5 40 1N4109 14.25 15 15.75 250 100 0.05 11.4 16.3 40 1N4110 15.20 16 16.80 250 100 0...