BD243

BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 5 6 10 2 65 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C Collector Cut-off Current Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 1A VCE = 4V, IC = 6A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage * Pulse Test :PW=300µs, duty Cycle<20% Pulsed ©2000...