BD241A

BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 45 60 80 100 55 70 90 115 5 3 5 1 40 150 - 65 ~ 150 Units V V V V V V V V V A A A W °C °C VCER VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD241 : BD241A : BD241B : BD241C Collector Cut-off Current Collector Cut-off Current : BD241/A : BD241B/C : BD241 : BD241A : BD241B : BD241C Test Condition IC = - 30mA, IB = 0 Min. 45 60 80 100 0.3 0.3 0.2 0.2 0.2 0.2 1 25 10 1.2 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 0.6A VCE = 4V, IC = 3A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage * Pulse Test: PW=350µs, duty Cycle≤2% Pulsed ©2000 Fairchild Semi...