BD236

BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications Complement to BD 233/235/237 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD234 : BD236 : BD238 VCEO Collector-Emitter Voltage : BD234 : BD236 : BD238 Collector-Emitter Voltage : BD234 : BD236 : BD238 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 100 - 45 - 60 - 80 - 45 - 60 - 100 -5 -2 -6 25 150 - 65 ~ 150 V V V V V V V V V V A A W °C °C Value Units VCER VEBO IC ICP PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD234 : BD236 : BD238 Collector Cut-off Current : BD234 : BD236 : BD238 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A IC = - 1A , IB = - 0.1A VCE = - 2V, IC = - 1A VCE = - 10V, IC = -250mA 3 40 25 - 0.6 - 1.3 V V MHz - 100 - 100 - 100 -1 µA µA µA mA Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2000 Fairchild Semicond...