BD235

BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 Value 45 60 100 45 60 80 45 60 100 5 2 6 25 150 - 65 ~ 150 Units V V V V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Collector Cut-off Current : BD233 : BD235 : BD237 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 150mA VCE = 2V, IC = 1A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 250mA 3 40 25 0.6 1.3 V V MHz 100 100 100 1 µA µA µA mA Test Condition IC = 100mA, IB = 0 Min. 45 60 80 Typ. Max. Units V V V ICBO * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD233/235/237 Typical Ch...