CEB9055

CEP9055/CEB9055 CEF9055 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9055 CEB9055 CEF9055 VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 100A 100A 100A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 g & TO-263 package & TO-220F full-pak for through hole. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 55 VGS ±20 ID 100 100 e IDM f 300 300 e Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 200 75 PD 1.3 0.5 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 325 325 50 50 -55 to 175 Units V V A A W W/ C mJ A C Ther...