Document
CEP9055/CEB9055 CEF9055
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP9055 CEB9055 CEF9055
VDSS 55V 55V 55V
RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ
ID 100A 100A 100A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 g & TO-263 package & TO-220F full-pak for through hole.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G D S CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 55
VGS ±20
ID 100 100 e
IDM f
300 300 e
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
200 75 PD 1.3 0.5
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
325 325 50 50
-55 to 175
Units
V V A A W W/ C mJ A C
Ther.