CEB840N

CEP840N/CEB840N CEF840N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP840N CEB840N VDSS 500V 500V CEF840N 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 500 VGS ±30 ID 8 8 e IDM f 32 32 e 125 40 PD 1.0 0.32 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.0 62.5 3.1 65 Units V V A A W W/ C C Units C/W C/W ...