CEF740N

CEP740N/CEB740N CEF740N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP740N CEB740N CEF740N VDSS 400V 400V 400V RDS(ON) 550mΩ 550mΩ 550mΩ ID 10A 10A 10A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 400 VGS ±30 ID 10 10 e IDM f 40 40 e 125 40 PD 1 0.32 EAS IAS TJ,Tstg 458 10 -55 to 150 458 10 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Juncti...